$25
CEI EN 60749-44
2017
Semiconductor devices – Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
- Format:
- Language(s) :
- Published :
- English
- 06/01/2017
BILINGUAL
This part of IEC 60749 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit.
NOTE 1 Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4 [2].
NOTE 2 In addition to the high energy neutrons some devices can have a soft error rate due to low energy (<1 eV) thermal neutrons. For this subject which is not covered in this document, please refer to IEC 62396-5 [3].
| CEI EN 60749-44 | |
|---|---|
| STANDARD INFO: | |
| Standard Name | CEI EN 60749-44 |
| Scope | Semiconductor devices - Mechanical and climatic test methods Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices |
| Publisher | CEI - Comitato Elettrotecnico Italiano |
| Languages | English |
| State | [ Active ] |
| Publication Year | 2017 |
| Most recent Version | MOST RECENT |
| Whether to be replaced | |
| Addendum | |
| FILE INFO: | |
| Edition | 17 |
| File Size | 1 file , 2 MB |
| Number of Pages | 28 |
| Published | 06/01/2017 |
| CEI EN 60749-44 | ||
|---|---|---|
| History | Publisher Year | |
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