$16
CEI EN 62417
2011
Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- Format:
- Language(s) :
- Published :
- English
- 05/01/2011
La presente Norma si occupa dei dispositivi a semiconduttore ed in particolare delle prove con ioni mobili per transistori ad effetto campo.
Viene fornita una procedura di prova a livello di wafer per determinare la quantità di carica mobile positiva nello strato di ossido nei semiconduttori ad effetto di campo metallo-ossido.
La prova è applicabile ai transistori con effetto campo sia attivo che parassita.
La carica mobile può causare un degrado per i dispositivi microelettronici .
Questa Norma viene pubblicata dal CEI nella sola lingua inglese in quanto particolarmente mirata a settori specialistici.
La presente Norma recepisce il testo originale inglese della Pubblicazione IEC.
| CEI EN 62417 | |
|---|---|
| STANDARD INFO: | |
| Standard Name | CEI EN 62417 |
| Scope | Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) |
| Publisher | CEI - Comitato Elettrotecnico Italiano |
| Languages | English |
| State | [ Active ] |
| Publication Year | 2011 |
| Most recent Version | MOST RECENT |
| Whether to be replaced | |
| Addendum | |
| FILE INFO: | |
| Edition | 11 |
| File Size | 1 file , 750 KB |
| Number of Pages | 14 |
| Published | 05/01/2011 |
| CEI EN 62417 | ||
|---|---|---|
| History | Publisher Year | |
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