$16
CEI EN IEC 60749-17
2019
Semiconductor devices – Mechanical and climatic test methods Part 17: Neutron irradiation
- Format:
- Language(s) :
- Published :
- English
- 10/01/2019
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
| CEI EN IEC 60749-17 | |
|---|---|
| STANDARD INFO: | |
| Standard Name | CEI EN IEC 60749-17 |
| Scope | Semiconductor devices - Mechanical and climatic test methods Part 17: Neutron irradiation |
| Publisher | CEI - Comitato Elettrotecnico Italiano |
| Languages | English |
| State | [ Active ] |
| Publication Year | 2019 |
| Most recent Version | MOST RECENT |
| Whether to be replaced | |
| Addendum | |
| FILE INFO: | |
| Edition | 19 |
| File Size | 1 file , 1.7 MB |
| Number of Pages | 16 |
| Published | 10/01/2019 |
| CEI EN IEC 60749-17 | ||
|---|---|---|
| History | Publisher Year | |
| CEI EN IEC 60749-17 | 2019 | Current |
| CEI EN 60749-17 | 2004 |
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